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Semiconductor quantum dot microcavity pillars with high-quality factors and enlarged dot dimensions
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10.1063/1.1880446
/content/aip/journal/apl/86/11/10.1063/1.1880446
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/11/10.1063/1.1880446
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

SEM image of a cross section of structure MC2. The bottom DBR has 27, the top DBR 23 mirror pairs with a period of . The inset shows the surface image of an uncapped dot sample. The surface is tilted by 70° to enhance the height contrast.

Image of FIG. 2.
FIG. 2.

Reflectivity spectrum of structure MC1 (top curve), measured at , with a stopband of and a resonance peak at . The spectrum is shifted by to higher energies to allow a realistic comparison with the energetic position of the low-temperature PL measurements (bottom curve). The PL spectrum was measured with high spatial resolution (spot size ). The sharp lines in the tail of the main peak belong to single dot emission.

Image of FIG. 3.
FIG. 3.

High-resolution PL spectrum of the fundamental cavity mode of a micropillar (MC2) at with a full width at half maximum of corresponding to a factor of 20 800. The inset shows an SEM image of a processed microcavity pillar with a nominal diameter of and a height of about . The measured diameter at the -cavity position is indicated.

Image of FIG. 4.
FIG. 4.

factors as a function of the nominal cavity diameter for the MC1 (triangles), the MC2 (squares), and the MC2 structure after deconvolution (circles).

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/content/aip/journal/apl/86/11/10.1063/1.1880446
2005-03-07
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Semiconductor quantum dot microcavity pillars with high-quality factors and enlarged dot dimensions
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/11/10.1063/1.1880446
10.1063/1.1880446
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