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Self-organized growth of InAs quantum wires and dots on InP(001): The role of vicinal substrates
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10.1063/1.1884762
/content/aip/journal/apl/86/11/10.1063/1.1884762
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/11/10.1063/1.1884762
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

AFM , , different InAs thicknesses. 2 ML: (a) N height scale is , (b) A is , (c) B is . 4 ML: (d) N is , (e) A is , (f) B is . 6 ML: (g) N is , (h) A is , (i) B is .

Image of FIG. 2.
FIG. 2.

(Color online) Photoluminescence of 4 ML InAs in InP, at .

Image of FIG. 3.
FIG. 3.

AFM , , higher growth temperature. 4 ML : (a) N height scale is , (b) A is , (c) B is .

Image of FIG. 4.
FIG. 4.

AFM , on C surface. (a) 4 ML, lower growth rate, height scale . (b) 6 ML, default growth conditions, . (c) 4 ML, higher growth temperature, .

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/content/aip/journal/apl/86/11/10.1063/1.1884762
2005-03-10
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Self-organized growth of InAs quantum wires and dots on InP(001): The role of vicinal substrates
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/11/10.1063/1.1884762
10.1063/1.1884762
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