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On the band structure lineup at interfaces of , , and high- dielectrics
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10.1063/1.1866641
/content/aip/journal/apl/86/12/10.1063/1.1866641
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/12/10.1063/1.1866641

Figures

Image of FIG. 1.
FIG. 1.

Valence-band offsets of , , , and heterostructures vs the -type branch-point energies of the respective semiconductors.

Image of FIG. 2.
FIG. 2.

Valence-band offsets of , , and insulator stacks vs the -type branch-point energies of one of the insulators as determined from the data plotted in Fig. 1 ( data). All other data points and the dashed fit lines are the same as in Fig. 1.

Image of FIG. 3.
FIG. 3.

-type barrier heights of Schottky contacts versus the differences of the metal and electronegativities. data from Ref. 42, data from Ref. 43, data from Ref. 44, data from Ref. 45, data from Ref. 46, data from Ref. 47. The dashed line is the linear least-squares fit to all the data points.

Tables

Generic image for table
Table I.

Slope parameters and -type branch-point energies obtained from linear least squares fits to the data displayed in Fig. 1 and calculated charge-neutrality levels CNL.

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/content/aip/journal/apl/86/12/10.1063/1.1866641
2005-03-14
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: On the band structure lineup at interfaces of SiO2, Si3N4, and high-κ dielectrics
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/12/10.1063/1.1866641
10.1063/1.1866641
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