Full text loading...
Valence-band offsets of , , , and heterostructures vs the -type branch-point energies of the respective semiconductors.
Valence-band offsets of , , and insulator stacks vs the -type branch-point energies of one of the insulators as determined from the data plotted in Fig. 1 ( data). All other data points and the dashed fit lines are the same as in Fig. 1.
-type barrier heights of Schottky contacts versus the differences of the metal and electronegativities. data from Ref. 42, data from Ref. 43, data from Ref. 44, data from Ref. 45, data from Ref. 46, data from Ref. 47. The dashed line is the linear least-squares fit to all the data points.
Slope parameters and -type branch-point energies obtained from linear least squares fits to the data displayed in Fig. 1 and calculated charge-neutrality levels CNL.
Article metrics loading...