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Enhancement of breakdown voltage by AlN buffer layer thickness in high-electron-mobility transistors on diameter silicon
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10.1063/1.1879091
/content/aip/journal/apl/86/12/10.1063/1.1879091
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/12/10.1063/1.1879091
/content/aip/journal/apl/86/12/10.1063/1.1879091
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/content/aip/journal/apl/86/12/10.1063/1.1879091
2005-03-15
2014-07-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Enhancement of breakdown voltage by AlN buffer layer thickness in AlGaN∕GaN high-electron-mobility transistors on 4in. diameter silicon
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/12/10.1063/1.1879091
10.1063/1.1879091
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