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Enhancement of breakdown voltage by AlN buffer layer thickness in high-electron-mobility transistors on diameter silicon
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10.1063/1.1879091
/content/aip/journal/apl/86/12/10.1063/1.1879091
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/12/10.1063/1.1879091

Figures

Image of FIG. 1.
FIG. 1.

Schematic diagram of HEMTs on Si with different thicknesses of AlN buffer layer.

Image of FIG. 2.
FIG. 2.

(a) characteristics of HEMTs with AlN buffer layer. Top , ; (b) , , , and values of HEMTs as a function of AlN thicknesses.

Image of FIG. 3.
FIG. 3.

BV:ON and BV:OFF characteristics of AlGaN/GaN Hemts for different thicknesses of AIN buffer layers.

Image of FIG. 4.
FIG. 4.

wide HEMTs top-view photograph: (a) after BV:ON; (b) after BV:OFF; and (c) cross-sectional schematic diagram of two adjacent devices with breakdown junction∕region.

Tables

Generic image for table
Table I.

Parameter values BV:OFF, BV:ON, BV for two adjacent device ohmic contacts and for HEMTs with different AlN buffer layer thicknesses.

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/content/aip/journal/apl/86/12/10.1063/1.1879091
2005-03-15
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Enhancement of breakdown voltage by AlN buffer layer thickness in AlGaN∕GaN high-electron-mobility transistors on 4in. diameter silicon
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/12/10.1063/1.1879091
10.1063/1.1879091
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