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Schematic diagram of HEMTs on Si with different thicknesses of AlN buffer layer.
(a) characteristics of HEMTs with AlN buffer layer. Top , ; (b) , , , and values of HEMTs as a function of AlN thicknesses.
BV:ON and BV:OFF characteristics of AlGaN/GaN Hemts for different thicknesses of AIN buffer layers.
wide HEMTs top-view photograph: (a) after BV:ON; (b) after BV:OFF; and (c) cross-sectional schematic diagram of two adjacent devices with breakdown junction∕region.
Parameter values BV:OFF, BV:ON, BV for two adjacent device ohmic contacts and for HEMTs with different AlN buffer layer thicknesses.
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