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Gate-refreshable nanowire chemical sensors
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10.1063/1.1883715
/content/aip/journal/apl/86/12/10.1063/1.1883715
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/12/10.1063/1.1883715
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

ZnO NW curves obtained in different concentration at (a) and (b). Inset: NW conductance vs concentration at . (c) NW FET curves obtained in pure Ar (0 ppm), 5 and 10 ppm . Inset: detection sensitivity as a function of gate voltage.

Image of FIG. 2.
FIG. 2.

NW sensing response to 10 ppm and the conductance recovery process caused by a gate voltage pulse.

Image of FIG. 3.
FIG. 3.

(a) Gate “refresh” voltage magnitude as a function of and concentration. (b) NW conductance recovery under pulse in 10 ppm . Inset: recovery curves at different concentrations. The solid lines represent the linear fits in the recovery region. (c) Conductance recovery curves for under pulse. (d) Temperature dependence of the nanowire conductance show different activation energies, , obtained in Ar, , and .

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/content/aip/journal/apl/86/12/10.1063/1.1883715
2005-03-17
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Gate-refreshable nanowire chemical sensors
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/12/10.1063/1.1883715
10.1063/1.1883715
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