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ZnO NW curves obtained in different concentration at (a) and (b). Inset: NW conductance vs concentration at . (c) NW FET curves obtained in pure Ar (0 ppm), 5 and 10 ppm . Inset: detection sensitivity as a function of gate voltage.
NW sensing response to 10 ppm and the conductance recovery process caused by a gate voltage pulse.
(a) Gate “refresh” voltage magnitude as a function of and concentration. (b) NW conductance recovery under pulse in 10 ppm . Inset: recovery curves at different concentrations. The solid lines represent the linear fits in the recovery region. (c) Conductance recovery curves for under pulse. (d) Temperature dependence of the nanowire conductance show different activation energies, , obtained in Ar, , and .
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