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Comparison of the electronic properties of sublimation- and vapor-Bridgman-grown crystals of tetracene
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10.1063/1.1884751
/content/aip/journal/apl/86/12/10.1063/1.1884751
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/12/10.1063/1.1884751
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) Large tetracene crystal grown by the vapor-Bridgman technique. The longitudinal axis is approximately parallel to the crystallographic direction.

Image of FIG. 2.
FIG. 2.

Typical transit curves along the -direction recorded for the vapor-Bridgman crystal (black curve, at , , thickness ) and sublimation-grown crystals (gray curve, at , , thickness ).

Image of FIG. 3.
FIG. 3.

Effective hole mobility in the -direction vs temperature (log-log scale) for the vapor-Bridgman crystal (◇) and for sublimation crystals (other symbols). The latter indicate the good reproducibility for crystals from different batches. The dashed line is an estimation of the intrinsic mobility from the data of the sublimation-grown crystals.

Image of FIG. 4.
FIG. 4.

Gas chromatography spectra of tetracene (1) pristine material, (2) after purification by step sublimation, (3) after crystal growth in -flow reactor, and (4) after step sublimation followed by vapor-Bridgman growth. For clarity, the curves are shifted mutually by an offset.

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/content/aip/journal/apl/86/12/10.1063/1.1884751
2005-03-16
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Comparison of the electronic properties of sublimation- and vapor-Bridgman-grown crystals of tetracene
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/12/10.1063/1.1884751
10.1063/1.1884751
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