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Current–voltage curves for (110) in solution containing and at a scan rate of : (a) stationary conditions and (b) rotating disk electrode at a rotation rate of . The inset shows the diffusion limited deposition current at versus the square root of the rotation rate.
Atomic force microscope images of (a) , (b) , and (c) electrodeposited bismuth films on (110).
vs x-ray diffraction patterns for (a) and (b) thick bismuth films deposited on GaAs (110).
Current–voltage curves for a junction with a bismuth film. The series resistance was about . The inset shows the time dependence of the barrier height after deposition.
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