1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Semiconductive metal oxide ferroelectric memory transistor: A long-retention nonvolatile memory transistor
Rent:
Rent this article for
USD
10.1063/1.1886252
/content/aip/journal/apl/86/12/10.1063/1.1886252
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/12/10.1063/1.1886252
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The MFMSoxS 1T ferroelectric memory device structure.

Image of FIG. 2.
FIG. 2.

The 1T memory device standby condition of the “on” and “off” state.

Image of FIG. 3.
FIG. 3.

The vs curves of 1T memory device with various operation voltages.

Image of FIG. 4.
FIG. 4.

The vs curves of 1T memory device with various gate voltages.

Image of FIG. 5.
FIG. 5.

The vs curves of 1T memory device programming to the “on” and “off” state.

Image of FIG. 6.
FIG. 6.

The retention properties of the 1T memory device.

Loading

Article metrics loading...

/content/aip/journal/apl/86/12/10.1063/1.1886252
2005-03-18
2014-04-20
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Semiconductive metal oxide ferroelectric memory transistor: A long-retention nonvolatile memory transistor
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/12/10.1063/1.1886252
10.1063/1.1886252
SEARCH_EXPAND_ITEM