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Spin-polarized quasiparticles injection in heterostructure devices
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10.1063/1.1886258
/content/aip/journal/apl/86/12/10.1063/1.1886258
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/12/10.1063/1.1886258
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Figures

Image of FIG. 1.
FIG. 1.

Schematic figures of an 8-terminal (1–8) heterostructure device geometry: The central niobium micro-bridge (3–6) is located on the top of the ferromagnetic layer whose surface is covered by a thin tunnel barrier layer.

Image of FIG. 2.
FIG. 2.

Bridge critical current versus injection current at different temperatures for a thick STO barrier.

Image of FIG. 3.
FIG. 3.

Critical current versus temperature measured for different current injected for an thick STO barrier. The curves were used as thermometer scales for evaluation of the effective temperature in the bridge during self-heating.

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/content/aip/journal/apl/86/12/10.1063/1.1886258
2005-03-15
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Spin-polarized quasiparticles injection in La0.7Sr0.3MnO3∕SrTiO3∕Nb heterostructure devices
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/12/10.1063/1.1886258
10.1063/1.1886258
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