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Midgap levels in both - and -type 4H–SiC epilayers investigated by deep level transient spectroscopy
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10.1063/1.1886904
/content/aip/journal/apl/86/12/10.1063/1.1886904
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/12/10.1063/1.1886904
/content/aip/journal/apl/86/12/10.1063/1.1886904
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/content/aip/journal/apl/86/12/10.1063/1.1886904
2005-03-15
2014-07-28
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Midgap levels in both n- and p-type 4H–SiC epilayers investigated by deep level transient spectroscopy
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/12/10.1063/1.1886904
10.1063/1.1886904
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