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Cross-sectional scanning electron microscope image of a trenches etched and ashed in low- (upper half) over one complete level metal structure (lower half) showing that the deeper sidewalls are damaged (bowing and voids) more severely than the upper part of the sidewalls.
The intensity of lifetime components fitted for the PECVD film as a function of positron mean implantation depth . The intrinsic micropore intensity is the sum of the and intensities.
Cartoon of the pore structure deduced using PALS data on the PECVD film of . A layered structure is assumed with deduced thicknesses displayed along the right side. White dots represent sub-nm micropores. Small (isolated) mesopores and large (interconnected) meso pores are shown below a sealing layer. The arrows on the left indicate the approximate positions of the exposed surface after the corresponding time of etching.
The escape fraction (at ) (open squares) and the postash film thickness change, (solid circles), for PECVD vs the remaining film thickness after varying etch times.
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