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Current transport property of heterojunction: Influence of interface states
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10.1063/1.1886906
/content/aip/journal/apl/86/12/10.1063/1.1886906
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/12/10.1063/1.1886906
/content/aip/journal/apl/86/12/10.1063/1.1886906
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/content/aip/journal/apl/86/12/10.1063/1.1886906
2005-03-14
2014-09-22
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Current transport property of n-GaN∕n-6H–SiC heterojunction: Influence of interface states
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/12/10.1063/1.1886906
10.1063/1.1886906
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