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Current transport property of heterojunction: Influence of interface states
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10.1063/1.1886906
/content/aip/journal/apl/86/12/10.1063/1.1886906
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/12/10.1063/1.1886906
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Figures

Image of FIG. 1.
FIG. 1.

characteristics for different contact configurations depicted in the inset. (a) curve measured between contact A1 and A2 (▴) and curve measured between contact B1 and B2 (▵). (b) curve measured between contact A1 and B1. (엯) for HVPE and (●) for MBE grown sample, respectively. During the measurements, the SiC terminal was taken as the voltage reference, and GaN was biased either positively or negatively.

Image of FIG. 2.
FIG. 2.

DLTS spectra of heterostructure under various reverse bias conditions. A rate window of was used in the measurements. The inset shows the filling pulse and reverse bias applied to sample for DLTS measurements.

Image of FIG. 3.
FIG. 3.

Schematic energy band diagram of an heterojunction with the band-like interface states and biased (a) at zero, (b) negatively, and (c) positively.

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/content/aip/journal/apl/86/12/10.1063/1.1886906
2005-03-14
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Current transport property of n-GaN∕n-6H–SiC heterojunction: Influence of interface states
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/12/10.1063/1.1886906
10.1063/1.1886906
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