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Fluorine segregation and incorporation during solid-phase epitaxy of Si
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) SIMS profiles of F incorporation after implantation (dotted line, , ), during (continuous lines) and after (triangles) SPE at . The a–c interface positions during SPE, as determined by channeling measurements, are also indicated by vertical lines. (b) Averaged SPE rate (squares, left-hand vertical axis) and reciprocal of F peak FWHM (circles, right-hand vertical axis) versus depth. The undoped Si SPE rate at (Ref. 13) is reported too (horizontal dashed line).

Image of FIG. 2.
FIG. 2.

(a) SIMS profiles of B and As concentration after implantation: , (open circles); , (open squares); , (open diamonds, used to compensate the As doped sample). The B atomic excess in the B and As co-implanted sample is shown with a dash-dotted line. (b) SIMS profiles of F concentration after SPE in the B- (open circles) or As- (open squares) doped samples, in the B and As co-implanted sample (dash-dotted line), and without any dopant (triangles). F profile in the B doped sample after , RTA is reported too (closed circles). (c) SIMS profiles of B concentration after the SPE and , RTA, in absence (closed squares) or in presence (closed circles) of F. The as-implanted B profile (open circles) is reported as reference.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Fluorine segregation and incorporation during solid-phase epitaxy of Si