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Oxidation kinetics of ion-amorphized (0001) 6H–SiC: Competition between oxidation and recrystallization processes
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10.1063/1.1887820
/content/aip/journal/apl/86/12/10.1063/1.1887820
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/12/10.1063/1.1887820
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Oxide grown in wet oxidation on preamorphized SiC as a function of temperature. The thickness of the amorphous layer was . The oxide thickness was determined by RBS-C (●) or TEM (▴). Simulation curves were obtained with Eqs. (1)–(3) (continuous line), and with fast recrystallization based on Eq. (2) (dashed line).

Image of FIG. 2.
FIG. 2.

BF TEM micrographs taken on samples oxidized at for (a), for (b), and for (c).

Image of FIG. 3.
FIG. 3.

Maximum oxide thickness as a function of the oxidation temperature obtainable by the wet oxidation of an amorphous layer before the recrystallization of the film itself (continuous line). The dashed line shows the limitation due to the amorphous thickness of (our experimental conditions). The symbols (▴) are experimental data obtained for different time-temperature combinations giving rise to the maximum oxide thickness. The oxidation times are indicated in the figure.

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/content/aip/journal/apl/86/12/10.1063/1.1887820
2005-03-15
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Oxidation kinetics of ion-amorphized (0001) 6H–SiC: Competition between oxidation and recrystallization processes
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/12/10.1063/1.1887820
10.1063/1.1887820
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