1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Temperature effect on carrier transport characteristics in /Si heterojunction
Rent:
Rent this article for
USD
10.1063/1.1888039
/content/aip/journal/apl/86/12/10.1063/1.1888039
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/12/10.1063/1.1888039
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

RHEED pattern of the film with a thickness of 150 Å on Si (100) substrate at 620 °C under .

Image of FIG. 2.
FIG. 2.

XRD profile of the film prepared on Si (100) substrate.

Image of FIG. 3.
FIG. 3.

The current-voltage curve of /Si junction measuring in a wide applied voltage scope at room temperature. The inset is the schematic structure of present junction.

Image of FIG. 4.
FIG. 4.

The curves of /Si junction in a wide temperature range of 200–300 K.

Image of FIG. 5.
FIG. 5.

The voltage dependence of junction conductive resistance at different temperature. The dotted line delineates the threshold voltage defined at that point the current obviously starts to increase.

Image of FIG. 6.
FIG. 6.

Energy band diagram for /Si junction.

Loading

Article metrics loading...

/content/aip/journal/apl/86/12/10.1063/1.1888039
2005-03-14
2014-04-25
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Temperature effect on carrier transport characteristics in SrTiO3−δ/Si p-n heterojunction
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/12/10.1063/1.1888039
10.1063/1.1888039
SEARCH_EXPAND_ITEM