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RHEED pattern of the film with a thickness of 150 Å on Si (100) substrate at 620 °C under .
XRD profile of the film prepared on Si (100) substrate.
The current-voltage curve of /Si junction measuring in a wide applied voltage scope at room temperature. The inset is the schematic structure of present junction.
The curves of /Si junction in a wide temperature range of 200–300 K.
The voltage dependence of junction conductive resistance at different temperature. The dotted line delineates the threshold voltage defined at that point the current obviously starts to increase.
Energy band diagram for /Si junction.
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