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curve of Schottky diodes under forward bias condition at and the fitting curve to the characteristic in the TFE regime.
Forward characteristic of Schottky diodes as a function of temperature.
The left-hand spectrum shows the Ga core-level peak on without a Ni overlayer. The right-hand panel presents the spectrum of the valence-band region. A linear fit is used to determine the energy of the valence-band edge.
Ga core level at the interface. The binding energy is referenced to the Fermi level.
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