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Application of the thermionic field emission model in the study of a Schottky barrier of Ni on from current–voltage measurements
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10.1063/1.1890476
/content/aip/journal/apl/86/12/10.1063/1.1890476
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/12/10.1063/1.1890476
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

curve of Schottky diodes under forward bias condition at and the fitting curve to the characteristic in the TFE regime.

Image of FIG. 2.
FIG. 2.

Forward characteristic of Schottky diodes as a function of temperature.

Image of FIG. 3.
FIG. 3.

The left-hand spectrum shows the Ga core-level peak on without a Ni overlayer. The right-hand panel presents the spectrum of the valence-band region. A linear fit is used to determine the energy of the valence-band edge.

Image of FIG. 4.
FIG. 4.

Ga core level at the interface. The binding energy is referenced to the Fermi level.

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/content/aip/journal/apl/86/12/10.1063/1.1890476
2005-03-18
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Application of the thermionic field emission model in the study of a Schottky barrier of Ni on p-GaN from current–voltage measurements
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/12/10.1063/1.1890476
10.1063/1.1890476
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