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Effects of nitrogen-incorporated interface layer on the transient characteristics of hafnium oxide -metal–oxide–semiconductor field-effect transistors
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) Schematic diagram of transient measurement technique and typical transient curves for both sample transistors and (b) in the transient MOSFET characteristics, higher difference in the nitrogen-incorporated structures is attributed to higher traps in dielectric layers.

Image of FIG. 2.
FIG. 2.

At the same gate pulse bias, the nitrogen-incorporated interface structure shows that is the main reason for shift. However, plays an important role in shift at low gate voltage regime regardless of interface structures.

Image of FIG. 3.
FIG. 3.

Under the identical input pulse shape for the pulsed measurement and the charge pumping, slower transition of input signal led to higher trap density in nitrogen-incorporated structure. Bulk traps appear to be the main factor for shift in nitrogen-incorporated interface structure. However, interface charges are one of the main shift reasons for interface.

Image of FIG. 4.
FIG. 4.

(a) Time dependent instability is more severe in SiN interface. However, the degradation of field effect mobility is less severe and (b) instability in SiN is believed to originate from the bulk traps generation. These imply that the degradation of interface traps is the main reason for the mobility degradation.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effects of nitrogen-incorporated interface layer on the transient characteristics of hafnium oxide n-metal–oxide–semiconductor field-effect transistors