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(a) AFM image of GaN film grown with pure (gray scale ). (b), (c), and (d) AFM images of GaN films grown in the presence of H (gray scales 11, 46, and , respectively). Line cut along the dashed line in (c) is shown in the inset. The inset in (d) is a scanning electron micrograph of a large hexagonal island on the surface. Films shown in (a)–(c) are grown on HVPE-GaN-on-sapphire substrates, whereas the film shown in (d) is grown on a H-etched SiC substrate.
(a) AFM image of a GaN film grown in the presence of H that has undergone an additional plasma exposure at (gray scale ). (b) Line cuts of four surface depressions, with their identifying numbers (1–4) shown directly below each depression in (a).
(a) AFM topography of a GaN film grown without the presence of hydrogen, together with current images acquired at sample voltages of (b) and (c) . (d) AFM topography of a GaN film grown with the presence of hydrogen, together with current images acquired at (e) and (f) . All images have a size of . Gray scale ranges are for (a) and (d), for (b) and (c), and for (e) and (f).
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