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Effects of hydrogen on the morphology and electrical properties of GaN grown by plasma-assisted molecular-beam epitaxy
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10.1063/1.1890482
/content/aip/journal/apl/86/12/10.1063/1.1890482
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/12/10.1063/1.1890482
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Figures

Image of FIG. 1.
FIG. 1.

(a) AFM image of GaN film grown with pure (gray scale ). (b), (c), and (d) AFM images of GaN films grown in the presence of H (gray scales 11, 46, and , respectively). Line cut along the dashed line in (c) is shown in the inset. The inset in (d) is a scanning electron micrograph of a large hexagonal island on the surface. Films shown in (a)–(c) are grown on HVPE-GaN-on-sapphire substrates, whereas the film shown in (d) is grown on a H-etched SiC substrate.

Image of FIG. 2.
FIG. 2.

(a) AFM image of a GaN film grown in the presence of H that has undergone an additional plasma exposure at (gray scale ). (b) Line cuts of four surface depressions, with their identifying numbers (1–4) shown directly below each depression in (a).

Image of FIG. 3.
FIG. 3.

(a) AFM topography of a GaN film grown without the presence of hydrogen, together with current images acquired at sample voltages of (b) and (c) . (d) AFM topography of a GaN film grown with the presence of hydrogen, together with current images acquired at (e) and (f) . All images have a size of . Gray scale ranges are for (a) and (d), for (b) and (c), and for (e) and (f).

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/content/aip/journal/apl/86/12/10.1063/1.1890482
2005-03-17
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effects of hydrogen on the morphology and electrical properties of GaN grown by plasma-assisted molecular-beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/12/10.1063/1.1890482
10.1063/1.1890482
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