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Potential imaging of /polycrystalline silicon gate stacks: Evidence for an oxide dipole
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10.1063/1.1890483
/content/aip/journal/apl/86/12/10.1063/1.1890483
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/12/10.1063/1.1890483
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Topography (a and c) and corresponding surface potential or CPD images in cross section of a gate stack. The lower pair is at an enhanced magnification. Contrast scales: (a) and (b) and , respectively; (c) and (d), and .

Image of FIG. 2.
FIG. 2.

Band diagrams and associated vacuum level and contact potential for an idealized gate stack (left) and one with a dipole across the oxide (right).

Image of FIG. 3.
FIG. 3.

Topography (a) and potential profile (b) across gate stack region marked by the dashed lines at the bottom of Fig. 1. Curve (c) is a potential profile along the interface at a distance of into the poly-Si of Fig. 1(d).

Image of FIG. 4.
FIG. 4.

Band diagram depicting the dipole-mediated decrease of the flatband voltage in .

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/content/aip/journal/apl/86/12/10.1063/1.1890483
2005-03-17
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Potential imaging of Si∕HfO2/polycrystalline silicon gate stacks: Evidence for an oxide dipole
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/12/10.1063/1.1890483
10.1063/1.1890483
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