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Effect of growth temperature and post-growth thermal annealing on carrier localization and deep level emissions in quantum well structures
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10.1063/1.1891271
/content/aip/journal/apl/86/12/10.1063/1.1891271
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/12/10.1063/1.1891271
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

PL spectra of samples A and B, measured at (a) RT and (b) with an excitation power of and an excitation wavelength of .

Image of FIG. 2.
FIG. 2.

PL spectra of the as-grown samples and after annealing at for for (a) sample A and (b) sample B, measured at with an excitation power of .

Image of FIG. 3.
FIG. 3.

PL intensity ratio vs annealing time for sample A annealed at (엯) and (●), and for sample B annealed at (◻) and (×).

Image of FIG. 4.
FIG. 4.

PL spectra of the as-grown sample B and after thermal annealing at for measured at with an excitation power of .

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/content/aip/journal/apl/86/12/10.1063/1.1891271
2005-03-16
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of growth temperature and post-growth thermal annealing on carrier localization and deep level emissions in GaNAs∕GaAs quantum well structures
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/12/10.1063/1.1891271
10.1063/1.1891271
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