1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Effect of growth temperature and post-growth thermal annealing on carrier localization and deep level emissions in quantum well structures
Rent:
Rent this article for
USD
10.1063/1.1891271
/content/aip/journal/apl/86/12/10.1063/1.1891271
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/12/10.1063/1.1891271
/content/aip/journal/apl/86/12/10.1063/1.1891271
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/aip/journal/apl/86/12/10.1063/1.1891271
2005-03-16
2014-08-29
Loading

Full text loading...

This is a required field
Please enter a valid email address
This feature is disabled while Scitation upgrades its access control system.
This feature is disabled while Scitation upgrades its access control system.
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of growth temperature and post-growth thermal annealing on carrier localization and deep level emissions in GaNAs∕GaAs quantum well structures
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/12/10.1063/1.1891271
10.1063/1.1891271
SEARCH_EXPAND_ITEM