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Study of the dominant luminescence mechanism in multiple quantum wells comprised of ultrasmall InGaN quasiquantum dots
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10.1063/1.1891291
/content/aip/journal/apl/86/12/10.1063/1.1891291
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/12/10.1063/1.1891291

Figures

Image of FIG. 1.
FIG. 1.

HRTEM bright-field images under a (0002) two beam condition for samples A (a) and B (b). The inset in (a) is an enlarged view of the energy-filtered HRTEM image of sample A.

Image of FIG. 2.
FIG. 2.

Micro PL spectra from samples A (solid line) and B (dashed line).

Image of FIG. 3.
FIG. 3.

Calculated transition energy as a function of indium composition for two quantum dot sizes of and where the theoretical energy band gaps for materials in bulk form and experimental PL emission were marked in solid and dashed lines, respectively. Open circles are the experimental data from Ref. 12 (13), where In composition inside cluster (38%), In-rich cluster , and transition . The closed circles are compared values in the same situation acquired from simulations.

Tables

Generic image for table
Table I.

All material parameters employed in the calculation of the transition energy.

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/content/aip/journal/apl/86/12/10.1063/1.1891291
2005-03-17
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Study of the dominant luminescence mechanism in InGaN∕GaN multiple quantum wells comprised of ultrasmall InGaN quasiquantum dots
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/12/10.1063/1.1891291
10.1063/1.1891291
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