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Electrical characterization of strained wafers using transient capacitance measurements
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10.1063/1.1891303
/content/aip/journal/apl/86/12/10.1063/1.1891303
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/12/10.1063/1.1891303

Figures

Image of FIG. 1.
FIG. 1.

Sample structure.

Image of FIG. 2.
FIG. 2.

results for MOS capacitors fabricated by St-Si wafer E and bulk Si wafer G. The inset shows the MOS electrode and guard ring pattern.

Image of FIG. 3.
FIG. 3.

DLTS signal dependence on for Nss measurements.

Image of FIG. 4.
FIG. 4.

(a) Nss results of wafers A, B, and C and G; (b) Nss results of wafers D, E, F, and G.

Image of FIG. 5.
FIG. 5.

(a) signals of wafers A, B, and C; (b) signals of wafers D, E, F, and G.

Tables

Generic image for table
Table I.

Wafer parameters and measurement results.

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/content/aip/journal/apl/86/12/10.1063/1.1891303
2005-03-18
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrical characterization of strained Si∕SiGe wafers using transient capacitance measurements
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/12/10.1063/1.1891303
10.1063/1.1891303
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