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results for MOS capacitors fabricated by St-Si wafer E and bulk Si wafer G. The inset shows the MOS electrode and guard ring pattern.
DLTS signal dependence on for Nss measurements.
(a) Nss results of wafers A, B, and C and G; (b) Nss results of wafers D, E, F, and G.
(a) signals of wafers A, B, and C; (b) signals of wafers D, E, F, and G.
Wafer parameters and measurement results.
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