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Schematic diagram of AFMP measuring an organic TFT. A voltage follower with high-input resistance and low-input capacitance is set into a tapping-mode cantilever holder and connected to a conductive AFM cantilever.
(a) Topographic and (b) corresponding potential images of a working pentacene TC–TFT. The plane area that appears on the left side of each image is a source electrode (common) and that on the right side is a drain electrode (biased to −5 V). −30 V was applied to the gate electrode.
Potential profiles across the channel of the pentacene TFT. Back-and-forth profiles are shown to confirm the equilibration of the potential measurement. The inset shows (solid line) topographic height and (dotted line) tapping-phase profiles near the edge of the source electrode on , which was taken at the point adjacent to but out of the pentacene-deposited area.
Simulated surface potential profiles of pentacene TC-TFTs with (a) ohmic contacts, i.e., an ideal TC-TFT, (b) 0.2 eV Schottky barriers at metal–pentacene junctions, (c) ohmic contacts and type I damage where the mobility of pentacene just under the source and drain is of the bulk mobility, and (d) ohmic contacts and type II damage where the damaged area is extended 400 nm into the channel region.
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