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Ternary rare-earth metal oxide high- layers on silicon oxide
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10.1063/1.1886249
/content/aip/journal/apl/86/13/10.1063/1.1886249
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/13/10.1063/1.1886249
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Cross-sectional TEM image of a layer deposited using PLD onto chemical oxide on Si.

Image of FIG. 2.
FIG. 2.

curves of the capacitors measured at using both voltage sweep directions (a) and at different frequencies with voltage swept from accumulation to inversion (b).

Image of FIG. 3.
FIG. 3.

EOT versus thickness as measured by spectroscopic ellipsometry. The slope of the line gives a value around 22.

Image of FIG. 4.
FIG. 4.

Gate leakage current measured under a bias of below the flat band voltage value. All the data were obtained from the capacitors using a TiN electrode except those for , which are reference data from the capacitors using a polycrystalline silicon electrode.

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/content/aip/journal/apl/86/13/10.1063/1.1886249
2005-03-22
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ternary rare-earth metal oxide high-k layers on silicon oxide
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/13/10.1063/1.1886249
10.1063/1.1886249
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