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Cross-sectional TEM image of a layer deposited using PLD onto chemical oxide on Si.
curves of the capacitors measured at using both voltage sweep directions (a) and at different frequencies with voltage swept from accumulation to inversion (b).
EOT versus thickness as measured by spectroscopic ellipsometry. The slope of the line gives a value around 22.
Gate leakage current measured under a bias of below the flat band voltage value. All the data were obtained from the capacitors using a TiN electrode except those for , which are reference data from the capacitors using a polycrystalline silicon electrode.
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