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Resonance-tunneling-assisted emission enhancement in green light-emitting diodes with nanocraters formed in quantum-well active layers
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10.1063/1.1890475
/content/aip/journal/apl/86/13/10.1063/1.1890475
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/13/10.1063/1.1890475
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Cross-sectional TEM images of the green LED with five periods of GaN MQW active layers.

Image of FIG. 2.
FIG. 2.

EL spectra of the green LED at various temperatures show the large redshift mostly between 120 and . As seen in the inset the shift energy is .

Image of FIG. 3.
FIG. 3.

Schematic representation of the nanocrater model consisting a Ga-rich barrier and an In-rich QD-like localize state embedded in the InGaN QW layer. The well to crater resonant tunneling can arises through the .

Image of FIG. 4.
FIG. 4.

The temperature dependence of the ratio of to . The solid circle and solid line represent experimental data and the fitting curve, respectively, with the value of and , and .

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/content/aip/journal/apl/86/13/10.1063/1.1890475
2005-03-21
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Resonance-tunneling-assisted emission enhancement in green light-emitting diodes with nanocraters formed in InGaN∕GaN quantum-well active layers
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/13/10.1063/1.1890475
10.1063/1.1890475
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