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Cross-sectional TEM images of the green LED with five periods of GaN MQW active layers.
EL spectra of the green LED at various temperatures show the large redshift mostly between 120 and . As seen in the inset the shift energy is .
Schematic representation of the nanocrater model consisting a Ga-rich barrier and an In-rich QD-like localize state embedded in the InGaN QW layer. The well to crater resonant tunneling can arises through the .
The temperature dependence of the ratio of to . The solid circle and solid line represent experimental data and the fitting curve, respectively, with the value of and , and .
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