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Low-temperature processable inherently photosensitive polyimide as a gate insulator for organic thin-film transistors
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10.1063/1.1894587
/content/aip/journal/apl/86/13/10.1063/1.1894587
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/13/10.1063/1.1894587
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Chemical structure of a unique low-temperature processable, inherently photosensitive polyimide. (b) Optical microscope image for the negatively patterned polyimide gate insulator.

Image of FIG. 2.
FIG. 2.

(Color online) (a) Schematic cross section of pentacene OTFT with the low-temperature processable photosensitive polyimide. (b) Flexible pentacene OTFT fabricated on PES substrate.

Image of FIG. 3.
FIG. 3.

(Color online) (a) and (b) Output and transfer characteristic curves, respectively, of OTFT with as-prepared polyimide on ITO glass substrate. (c) and (d) Output and transfer characteristic curves, respectively, of OTFT with the patterned polyimide on PES substrate. The OTFT has a -thick gate insulator and -thick pentacene layer. Inset: AFM images of the -thick pentacene film deposited on top of the as-prepared and patterned gate insulator.

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/content/aip/journal/apl/86/13/10.1063/1.1894587
2005-03-24
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Low-temperature processable inherently photosensitive polyimide as a gate insulator for organic thin-film transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/13/10.1063/1.1894587
10.1063/1.1894587
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