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Low-resistance Al-based reflectors for high-power GaN-based flip-chip light-emitting diodes
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10.1063/1.1894614
/content/aip/journal/apl/86/13/10.1063/1.1894614
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/13/10.1063/1.1894614
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Figures

Image of FIG. 1.
FIG. 1.

(a) The characteristics of Ag contacts annealed at temperatures of 530 and for in air. (b) The behaviors of the Ag∕ITO contacts combined with Al reflectors, which were annealed at for in vacuum.

Image of FIG. 2.
FIG. 2.

Auger depth profile of the -annealed Ag-ITO∕Al contact, which was annealed at for in vacuum.

Image of FIG. 3.
FIG. 3.

Optical reflectance obtained from the annealed Ag-ITO∕Al contacts, which were annealed at .

Image of FIG. 4.
FIG. 4.

Typical characteristics of LEDs fabricated with the annealed Ag-ITO∕Al -type contact layers, which were annealing at .

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/content/aip/journal/apl/86/13/10.1063/1.1894614
2005-03-21
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Low-resistance Al-based reflectors for high-power GaN-based flip-chip light-emitting diodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/13/10.1063/1.1894614
10.1063/1.1894614
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