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Intrinsic reoxidation of microwave plasma-nitrided gate dielectrics
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10.1063/1.1895486
/content/aip/journal/apl/86/13/10.1063/1.1895486
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/13/10.1063/1.1895486
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Figures

Image of FIG. 1.
FIG. 1.

Equivalent oxide thickness (EOT) vs gate leakage current of devices with gate dielectrics nitrided at low and high nitridation pressures. The at. % nitrogen in each sample is indicated and was varied using gas flow ratios.

Image of FIG. 2.
FIG. 2.

(a) Schematic showing a possible reaction pathway for the plasma nitridation process. Incoming nitrogen radicals replace oxygen atoms to form Si–N bonds. The actual reaction pathway may involve intermediates, but the end result is a Si–N bond. (b) Schematic showing that during high-pressure nitridation the oxygen atoms and radicals may form interfacial layer, preventing EOT scaling.

Image of FIG. 3.
FIG. 3.

XPS data showing the oxygen O signal as a function of gate dielectric nitrogen content and XPS thickness. The data indicate that the Si–O bond concentration increases with nitridation process pressure over a wide range of nitrogen concentration and film thickness. The 107 Pa process results were close to the 146 Pa data.

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/content/aip/journal/apl/86/13/10.1063/1.1895486
2005-03-22
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Intrinsic reoxidation of microwave plasma-nitrided gate dielectrics
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/13/10.1063/1.1895486
10.1063/1.1895486
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