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Electrical conduction transition and largely reduced leakage current in aluminum-doped barium strontium titanate thin films heteroepitaxially grown on
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10.1063/1.1896448
/content/aip/journal/apl/86/13/10.1063/1.1896448
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/13/10.1063/1.1896448
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

X-ray diffraction patterns of BSTA thin films with different Al-doping level grown on -buffered silicon substrates by pulsed-laser deposition. Inset is the variation of FWHM for BSTA peaks as a function of Al content.

Image of FIG. 2.
FIG. 2.

characteristics for undoped, 3 at. % Al-doped and 6 at. wt % Al-doped BSTA thin films at room temperature.

Image of FIG. 3.
FIG. 3.

Logarithm of the leakage current density plotted as a function of logarithm of the applied electric field (log vs ) for 3 at. % Al-doped BSTA thin films. The values of different slopes and are listed in the plot. Inset is the plot of vs using the same set of data in the third slope region (denoted by the arrow), in which the data provides a good linear fit, giving the slope as 1.41.

Image of FIG. 4.
FIG. 4.

Variation of the leakage current density as a function of the applied electric field [plotted as vs ] for 6 at. wt % Al-doped BSTA thin films. The scattered data denote experimental values while the solid line denotes theoretical linear fit (the same meanings in Fig. 3). The slope of the solid line is 0.74, half the value of the slope in inset of Fig. 3.

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/content/aip/journal/apl/86/13/10.1063/1.1896448
2005-03-22
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrical conduction transition and largely reduced leakage current in aluminum-doped barium strontium titanate thin films heteroepitaxially grown on Ir∕MgO∕Si(100)
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/13/10.1063/1.1896448
10.1063/1.1896448
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