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X-ray diffraction patterns of BSTA thin films with different Al-doping level grown on -buffered silicon substrates by pulsed-laser deposition. Inset is the variation of FWHM for BSTA peaks as a function of Al content.
characteristics for undoped, 3 at. % Al-doped and 6 at. wt % Al-doped BSTA thin films at room temperature.
Logarithm of the leakage current density plotted as a function of logarithm of the applied electric field (log vs ) for 3 at. % Al-doped BSTA thin films. The values of different slopes and are listed in the plot. Inset is the plot of vs using the same set of data in the third slope region (denoted by the arrow), in which the data provides a good linear fit, giving the slope as 1.41.
Variation of the leakage current density as a function of the applied electric field [plotted as vs ] for 6 at. wt % Al-doped BSTA thin films. The scattered data denote experimental values while the solid line denotes theoretical linear fit (the same meanings in Fig. 3). The slope of the solid line is 0.74, half the value of the slope in inset of Fig. 3.
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