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High-power recessed gate heterostructure field-effect transistors
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10.1063/1.1886902
/content/aip/journal/apl/86/14/10.1063/1.1886902
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/14/10.1063/1.1886902
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic epilayer design of RG HFET.

Image of FIG. 2.
FIG. 2.

Capacitance–voltage characteristics of structures on : Solid line- of as-grown epilayer; dashed- of the processed HFET.

Image of FIG. 3.
FIG. 3.

dc characteristics for recessed gate HFET on . (a) Transfer characteristics, (b) transconductance characteristics.

Image of FIG. 4.
FIG. 4.

Gate leakage current of recessed gate HFET on .

Image of FIG. 5.
FIG. 5.

Breakdown voltage measurement for conventional HFET and recessed gate HFETs on semi-insulating substrates.

Image of FIG. 6.
FIG. 6.

Microwave output power and power added efficiency of recessed gate HFET.

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/content/aip/journal/apl/86/14/10.1063/1.1886902
2005-04-01
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High-power AlGaN∕InGaN∕AlGaN∕GaN recessed gate heterostructure field-effect transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/14/10.1063/1.1886902
10.1063/1.1886902
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