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Schematic epilayer design of RG HFET.
Capacitance–voltage characteristics of structures on : Solid line- of as-grown epilayer; dashed- of the processed HFET.
dc characteristics for recessed gate HFET on . (a) Transfer characteristics, (b) transconductance characteristics.
Gate leakage current of recessed gate HFET on .
Breakdown voltage measurement for conventional HFET and recessed gate HFETs on semi-insulating substrates.
Microwave output power and power added efficiency of recessed gate HFET.
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