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(a) AFM image of InP substrate surface with sulfur-ion implanted at a dose of and an energy of . The rms surface roughness is ; (b) height distribution of the sulfur-ion implanted InP substrate surface shown in (a).
Surface roughness of DHBT epitaxy layers grown on substrates with various implantation doses and energy, measured with different AFM scanning area. For , the dose for is half of the dose for .
Surface roughness measured with AFM scanning area of DHBT epitaxy layers regrown on substrates with different implant conditions vs calculated surface implant concentration.
DHBT epitaxial layer structure.
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