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Surface roughness in sulfur ion-implanted InP with molecular beam epitaxy regrown double-heterojunction bipolar transistor layers
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10.1063/1.1891270
/content/aip/journal/apl/86/14/10.1063/1.1891270
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/14/10.1063/1.1891270
/content/aip/journal/apl/86/14/10.1063/1.1891270
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/content/aip/journal/apl/86/14/10.1063/1.1891270
2005-03-31
2014-10-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Surface roughness in sulfur ion-implanted InP with molecular beam epitaxy regrown double-heterojunction bipolar transistor layers
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/14/10.1063/1.1891270
10.1063/1.1891270
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