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Surface roughness in sulfur ion-implanted InP with molecular beam epitaxy regrown double-heterojunction bipolar transistor layers
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10.1063/1.1891270
/content/aip/journal/apl/86/14/10.1063/1.1891270
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/14/10.1063/1.1891270

Figures

Image of FIG. 1.
FIG. 1.

(a) AFM image of InP substrate surface with sulfur-ion implanted at a dose of and an energy of . The rms surface roughness is ; (b) height distribution of the sulfur-ion implanted InP substrate surface shown in (a).

Image of FIG. 2.
FIG. 2.

Surface roughness of DHBT epitaxy layers grown on substrates with various implantation doses and energy, measured with different AFM scanning area. For , the dose for is half of the dose for .

Image of FIG. 3.
FIG. 3.

Surface roughness measured with AFM scanning area of DHBT epitaxy layers regrown on substrates with different implant conditions vs calculated surface implant concentration.

Tables

Generic image for table
Table I.

DHBT epitaxial layer structure.

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/content/aip/journal/apl/86/14/10.1063/1.1891270
2005-03-31
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Surface roughness in sulfur ion-implanted InP with molecular beam epitaxy regrown double-heterojunction bipolar transistor layers
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/14/10.1063/1.1891270
10.1063/1.1891270
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