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Germanium diffusion and nanocrystal formation in silicon oxide on silicon substrate under rapid thermal annealing
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10.1063/1.1891290
/content/aip/journal/apl/86/14/10.1063/1.1891290
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/14/10.1063/1.1891290
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The composition of Ge, and germanium suboxides as a function of depth into for the (a) as-sputtered sample, (b) sample RTA at , and (c) sample RTA at . Note that indicates the sample surface.

Image of FIG. 2.
FIG. 2.

Cross-sectional TEMs of cosputtered Ge plus samples that were rapid thermal annealed at (a) , (b) , and (c) in Ar ambient for . The insets of (a) and (b) show the HRTEMs of nanocrystals in region A, and the inset of (c) shows the HRTEM of a large nanocrystal near the interface.

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/content/aip/journal/apl/86/14/10.1063/1.1891290
2005-03-31
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Germanium diffusion and nanocrystal formation in silicon oxide on silicon substrate under rapid thermal annealing
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/14/10.1063/1.1891290
10.1063/1.1891290
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