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Idealized nanowire array device schematic showing the device bias. The device structure is as follows: aluminium foil substrate (dark grey); filled and unfilled porous alumina regions (thick black and thick white vertical lines respectively); SiO (dark grey horizontal bar); spin-coated light-emitting polymer TPD-MEH-PPV (shaded layer); evaporated aluminium top contact (uppermost light grey layer).
A cross-section SEM image of the copper filled PAM. The upper inset shows a top down image of the porous surface of a PAM (scale bar ) and the lower inset shows a cross-section of an overfilled pore (scale bar ).
Current density vs voltage for the unfilled PAM (open circles), 4 (open squares), 6 (open triangle), 7 (inverted open triangle), and 8 (open diamond) min Cu-filled PAMs and the planar Cu-electrode device (solid circles). The inset shows the positive and negative bias characteristic for the Cu-filled PAM device.
Electroluminescence spectra for the Cu-filled PAM (open circle and dotted line) and the Cu planar electrode device (open square and dashed–dotted line). Photoluminescence spectrum for the emissive material (open triangle and solid line). The inset shows the chemical structure of the emissive polymer.
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