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Effect of hydrogen passivation on charge storage in silicon quantum dots embedded in silicon nitride film
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10.1063/1.1894595
/content/aip/journal/apl/86/14/10.1063/1.1894595
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/14/10.1063/1.1894595
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Figures

Image of FIG. 1.
FIG. 1.

(a) PL spectra of Samples A and B. (b) and (c) Plan-view TEM images of Samples A and B, respectively. The insets in (b) and (c) show an enlarged TEM view of the single Si QD.

Image of FIG. 2.
FIG. 2.

hysteresis curves of two types of silicon nitride films grown by (a) -diluted 5% and (b) -diluted 5% . The voltage of the top electrode is swept from to and back to .

Image of FIG. 3.
FIG. 3.

(a) Charge retention characteristics of Si QDs. The charge-loss rates were monitored at after injecting electrons/holes at for . (b) Schematic band diagram of silicon nitride films containing Si QDs.

Image of FIG. 4.
FIG. 4.

FTIR spectra of Samples A and B.

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/content/aip/journal/apl/86/14/10.1063/1.1894595
2005-03-29
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of hydrogen passivation on charge storage in silicon quantum dots embedded in silicon nitride film
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/14/10.1063/1.1894595
10.1063/1.1894595
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