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(a) PL spectra of Samples A and B. (b) and (c) Plan-view TEM images of Samples A and B, respectively. The insets in (b) and (c) show an enlarged TEM view of the single Si QD.
hysteresis curves of two types of silicon nitride films grown by (a) -diluted 5% and (b) -diluted 5% . The voltage of the top electrode is swept from to and back to .
(a) Charge retention characteristics of Si QDs. The charge-loss rates were monitored at after injecting electrons/holes at for . (b) Schematic band diagram of silicon nitride films containing Si QDs.
FTIR spectra of Samples A and B.
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