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Drain current and versus gate voltage at a constant source-drain voltage for OTFTs built on (a) nonmodified wafer, and (b) OTS-8-modified wafer. Both transistors have a channel length of 90 and channel width of .
(Color) (a) and (b) are, respectively, topography and phase images of annealed PQT-12 thin film on nonmodified surface; (c) and (d) are, respectively, topographic and phase images of annealed PQT-12 thin film on OTS-8-modified surface; (e) blown-up image from (d) showing rodlike structures within domains; (f) schematic depiction of a PQT-12 lamellar stack.
Contact angles of modified wafer surface with various silane agents and FET performance of OTFTs built on corresponding modified silicon wafer surfaces.
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