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Controlled orientation of liquid-crystalline polythiophene semiconductors for high-performance organic thin-film transistors
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10.1063/1.1894597
/content/aip/journal/apl/86/14/10.1063/1.1894597
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/14/10.1063/1.1894597

Figures

Image of FIG. 1.
FIG. 1.

Drain current and versus gate voltage at a constant source-drain voltage for OTFTs built on (a) nonmodified wafer, and (b) OTS-8-modified wafer. Both transistors have a channel length of 90 and channel width of .

Image of FIG. 2.
FIG. 2.

(Color) (a) and (b) are, respectively, topography and phase images of annealed PQT-12 thin film on nonmodified surface; (c) and (d) are, respectively, topographic and phase images of annealed PQT-12 thin film on OTS-8-modified surface; (e) blown-up image from (d) showing rodlike structures within domains; (f) schematic depiction of a PQT-12 lamellar stack.

Tables

Generic image for table
Table I.

Contact angles of modified wafer surface with various silane agents and FET performance of OTFTs built on corresponding modified silicon wafer surfaces.

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/content/aip/journal/apl/86/14/10.1063/1.1894597
2005-03-29
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Controlled orientation of liquid-crystalline polythiophene semiconductors for high-performance organic thin-film transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/14/10.1063/1.1894597
10.1063/1.1894597
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