1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Size, shape, and ordering of SiGe/Si(001) islands grown by means of liquid phase epitaxy under far-nonequilibrium growth conditions
Rent:
Rent this article for
USD
10.1063/1.1895476
/content/aip/journal/apl/86/14/10.1063/1.1895476
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/14/10.1063/1.1895476
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The scanning electron micrograph shows different island stages during the evolution. The process starts with steep dome-like islands with nearly vertical sidewalls which grow predominantly in lateral direction. Eventually, when they reach an aspect ratio base width vs height of 1.7, the shape changes significantly forming shallower {111} facets at the bottom.

Image of FIG. 2.
FIG. 2.

Final island stages are bounded by {111}- and {101}-type side facets without any top facet. At the island bottom characteristic spikes (s) in ⟨101⟩ direction appear. Moreover, every island causes a strain driven trench formation (d) in the closest lateral vicinity.

Image of FIG. 3.
FIG. 3.

The SiGe/Si(001) islands arrange themselves into a square-like pattern around a central island. This process indicates only next to island interactions.

Image of FIG. 4.
FIG. 4.

Energy dispersive x-ray microanalysis at islands of base widths , and yielding germanium concentrations , and , respectively. Each spectra has been vertically shifted by a factor of 10 for the sake of clearance.

Loading

Article metrics loading...

/content/aip/journal/apl/86/14/10.1063/1.1895476
2005-03-28
2014-04-17
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Size, shape, and ordering of SiGe/Si(001) islands grown by means of liquid phase epitaxy under far-nonequilibrium growth conditions
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/14/10.1063/1.1895476
10.1063/1.1895476
SEARCH_EXPAND_ITEM