Full text loading...
SIMS concentration-depth profiles for (a) unstrained unalloyed Si sample and (b) 7% Ge sample under biaxial compressive strain. Triangles: as-grown samples. Squares: after annealing at for at (a) ; (b) . The solid line represents the result from the simulation using the linear diffusion equation with (a) ; (b) .
Phosphorus diffusivity vs pressure at . Circles: samples under biaxial compressive strain; squares: unstrained unalloyed Si samples. The cross in the inset is a typical error bar.
Migration volume anisotropy, , calculated from Eq. (1) using the activation volumes measured in this work and the biaxial strain effect reported by Christensen et al. The uncertainties in exceed the uncertainties in by the unreported uncertainties associated with the measurement.
Article metrics loading...