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Activation volume for phosphorus diffusion in silicon and
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10.1063/1.1896445
/content/aip/journal/apl/86/14/10.1063/1.1896445
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/14/10.1063/1.1896445

Figures

Image of FIG. 1.
FIG. 1.

SIMS concentration-depth profiles for (a) unstrained unalloyed Si sample and (b) 7% Ge sample under biaxial compressive strain. Triangles: as-grown samples. Squares: after annealing at for at (a) ; (b) . The solid line represents the result from the simulation using the linear diffusion equation with (a) ; (b) .

Image of FIG. 2.
FIG. 2.

Phosphorus diffusivity vs pressure at . Circles: samples under biaxial compressive strain; squares: unstrained unalloyed Si samples. The cross in the inset is a typical error bar.

Tables

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Table I.

Migration volume anisotropy, , calculated from Eq. (1) using the activation volumes measured in this work and the biaxial strain effect reported by Christensen et al. The uncertainties in exceed the uncertainties in by the unreported uncertainties associated with the measurement.

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/content/aip/journal/apl/86/14/10.1063/1.1896445
2005-03-30
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Activation volume for phosphorus diffusion in silicon and Si0.93Ge0.07
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/14/10.1063/1.1896445
10.1063/1.1896445
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