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Temperature dependence of the negative bias temperature instability in the framework of dispersive transport
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10.1063/1.1897046
/content/aip/journal/apl/86/14/10.1063/1.1897046
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/14/10.1063/1.1897046
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Shift in threshold voltage as a function of stress time obtained at 3 different temperatures (open and closed symbols: two similarly processed wafers). All data can be described by a power-law dependence in the form . It is apparent that the NBTI exponent (i.e., the slope in the log-log plot) is increasing with increasing .

Image of FIG. 2.
FIG. 2.

NBTI exponent as a function of . The data can be satisfactorily described by a direct proportionality, characteristic for dispersive transport. The characteristic energy can be extracted describing the DOS of localized hydrogen states in the oxide bulk.

Image of FIG. 3.
FIG. 3.

The proposed dispersive-transport model predicts a linear acceleration of the logarithm of NBTI prefactor . This dependence is reasonably confirmed in the plot. The same data plotted vs follow noticeably less linear dependence.

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/content/aip/journal/apl/86/14/10.1063/1.1897046
2005-03-31
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Temperature dependence of the negative bias temperature instability in the framework of dispersive transport
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/14/10.1063/1.1897046
10.1063/1.1897046
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