1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Strain relaxation of epitaxial thin films on by two-step growth technique
Rent:
Rent this article for
USD
10.1063/1.1897047
/content/aip/journal/apl/86/14/10.1063/1.1897047
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/14/10.1063/1.1897047
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

XRD scans of films on . The solid line shows the normally deposited film. The dashed line shows the film with a -thick first layer (FL) deposited by the two-step growth technique.

Image of FIG. 2.
FIG. 2.

Out-of-plane lattice constants of films on with various thick first layers (FLs). Whole thicknesses of the films are regardless of thicknesses of FL. The dashed-dotted line shows the theoretical out-of-plane lattice constant at room temperature of STO film, which is fully relaxed at deposition temperature of .

Image of FIG. 3.
FIG. 3.

Temperature dependence of permittivity for -thick films with various thick first layers (FLs). The hatched areas show theoretical predictions of STO in paraelectric phase having the same lattice constant as our films with/without a -thick FL, considering spread in reported coefficients for STO.

Loading

Article metrics loading...

/content/aip/journal/apl/86/14/10.1063/1.1897047
2005-03-31
2014-04-24
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Strain relaxation of epitaxial SrTiO3 thin films on LaAlO3 by two-step growth technique
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/14/10.1063/1.1897047
10.1063/1.1897047
SEARCH_EXPAND_ITEM