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Lithographically defined metal-semiconductor-hybrid nanoscrolls
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10.1063/1.1897056
/content/aip/journal/apl/86/14/10.1063/1.1897056
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/14/10.1063/1.1897056
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Figures

Image of FIG. 1.
FIG. 1.

(a) Scheme of the conventional preparation technique for semiconductor scrolls. (b) Fabrication technique of a metal-semiconductor-hybrid scroll (inverse technique): (A) MBE-grown heterostructure, (B) photolithographic definition and evaporation of a metallization (defines size and shape of the scrolls); (C, D) photolithographic definition and etching of a starting edge (self aligning); (E) the double layer system rolls up after selective etching of the sacrificial layer.

Image of FIG. 2.
FIG. 2.

Array of MSHS consisting of a chromium layer on a substrate. The inlay shows a zoom of a MSHS with an outside radius of .

Image of FIG. 3.
FIG. 3.

Radius vs layer thickness for Cr on . The dashed–dotted and continuous lines are calculated with Eq. (1) with different strain. The data points are measured radii of tubes with and various Cr layer thicknesses.

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/content/aip/journal/apl/86/14/10.1063/1.1897056
2005-03-30
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Lithographically defined metal-semiconductor-hybrid nanoscrolls
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/14/10.1063/1.1897056
10.1063/1.1897056
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