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(a) Scheme of the conventional preparation technique for semiconductor scrolls. (b) Fabrication technique of a metal-semiconductor-hybrid scroll (inverse technique): (A) MBE-grown heterostructure, (B) photolithographic definition and evaporation of a metallization (defines size and shape of the scrolls); (C, D) photolithographic definition and etching of a starting edge (self aligning); (E) the double layer system rolls up after selective etching of the sacrificial layer.
Array of MSHS consisting of a chromium layer on a substrate. The inlay shows a zoom of a MSHS with an outside radius of .
Radius vs layer thickness for Cr on . The dashed–dotted and continuous lines are calculated with Eq. (1) with different strain. The data points are measured radii of tubes with and various Cr layer thicknesses.
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