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Effective removal of hydrogen resists used to pattern devices in silicon using scanning tunneling microscopy
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10.1063/1.1897064
/content/aip/journal/apl/86/14/10.1063/1.1897064
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/14/10.1063/1.1897064
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Filled state STM images showing a monohydride terminated Si(001) surface (a) and the surface after anneals at (b), (c), (d), (e), and (f) for each. Imaging conditions were (a) , , (b) , , (c) , , (d) , , (e) , , and (f) , .

Image of FIG. 2.
FIG. 2.

A region of hydrogen has been desorbed from a monohydride terminated Si(001) surface by biasing the STM tip to at a current of (a). After phosphine dosing and P incorporation at (b), a anneal removes all surface hydrogen, leaving the nanostructured region of phosphorus intact (c). Magnetotransport measurements for a STM lithographically-defined patch are shown in (d).

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/content/aip/journal/apl/86/14/10.1063/1.1897064
2005-04-01
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effective removal of hydrogen resists used to pattern devices in silicon using scanning tunneling microscopy
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/14/10.1063/1.1897064
10.1063/1.1897064
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