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Examining the screening limit of field effect devices via the metal-insulator transition
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18.For these experiments, we use with .
19.J.-M. Triscone, L. Frauchiger, M. Decroux, L. Mieville, Ø. Fischer, C. Beeli, P. Stadelmann, and G. A. Racine, J. Appl. Phys. 79, 4298 (1996). For LSMO, we use a growth temperature of and a process gas consisting of and Ar at a pressure of .
20.Small-angle x-ray reflectivity measurements also reveal a uniform film thickness with a roughness of over a scale, the same as is observed on the substrates.
24.For these experiments, we use with .
26.The magnetoresistance ratio (MRR) is defined as . For both heterostructures, the maximum MRR at is , occurring at .
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