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Examining the screening limit of field effect devices via the metal-insulator transition
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10.1063/1.1897076
/content/aip/journal/apl/86/14/10.1063/1.1897076
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/14/10.1063/1.1897076
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color) Atomic force microscopy image of the surface of a LSMO film. The measured rms surface roughness is . The image shows a series of terraces spaced a few hundred nanometers apart with a terrace height of .

Image of FIG. 2.
FIG. 2.

Sheet resistance as a function of temperature for unpatterned LSMO films of various thicknesses (from top to bottom: , , , , and ).

Image of FIG. 3.
FIG. 3.

Resistivity as a function of temperature for: (a) A LSMO heterostructure and (b) a LSMO heterostructure for the two polarization states of PZT. In each graph, the upper curve corresponds to depletion of holes and is termed the off state; the lower curve corresponds to accumulation of holes and is termed the on state. The inset in (b) is a semilog plot of the data.

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/content/aip/journal/apl/86/14/10.1063/1.1897076
2005-03-28
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Examining the screening limit of field effect devices via the metal-insulator transition
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/14/10.1063/1.1897076
10.1063/1.1897076
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