1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Single-shot readout with the radio-frequency single-electron transistor in the presence of charge noise
Rent:
Rent this article for
USD
10.1063/1.1897423
/content/aip/journal/apl/86/14/10.1063/1.1897423
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/14/10.1063/1.1897423
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Electron micrograph of the twin rf-SET and double-dot device. The rf-SETs detect the charge state of the two metal dots which are coupled by a tunnel junction (center of image); (b) is a schematic showing the two rf-SETs and the double-dot with associated gates and capacitances.

Image of FIG. 2.
FIG. 2.

(a) Time-domain response to both rf-SETs to a square wave signal applied to gate A2 via a attenuator . All measurements taken at ; (b) (taken from Ref. 12), the frequency-domain response to both rf-SETs to a AM signal (blue trace). We measure sensitivities of for SET1 and for SET2. Inset: Charge sensitivity as a function of frequency. Below the sensitivity is limited by noise.

Image of FIG. 3.
FIG. 3.

(a) Time-domain data for , obtained by averaging 256 times. (b) single-shot response of SET2 to a and step in a measurement time of . (c)–(e) show the corresponding probability distribution functions for each signal. We measure a time-domain sensitivity of in a bandwidth of for SET2.

Image of FIG. 4.
FIG. 4.

(a) The simultaneous response of both SETs to electron transfer between the two metal dots. -axis is voltage from demodulation circuit, proportional to reflected rf power; (b) sharp peaks are produced in the correlation whenever a transfer event occurs; (c) shows the bias applied to gates A1 and A2 to create a differential electric field; (d) single-shot time-domain measurements of charge transfer in the double dot system; (e) correlation of the signals from both SETs allows for error rejection in the event of charge noise (shaded region). All data data taken at .

Loading

Article metrics loading...

/content/aip/journal/apl/86/14/10.1063/1.1897423
2005-04-01
2014-04-24
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Single-shot readout with the radio-frequency single-electron transistor in the presence of charge noise
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/14/10.1063/1.1897423
10.1063/1.1897423
SEARCH_EXPAND_ITEM