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Epitaxial nanowire formation on stepped Si(111)
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Image of FIG. 1.
FIG. 1.

AFM images of islands grown by depositing ML Dy on Si(111) with various miscut angles and growth temperatures as follows: (a) at (coverage ML); (b) 15° toward Si[11-2] at ; (c) 12° toward Si[-1-12] at . The step-down direction for each is marked by black arrows.

Image of FIG. 2.
FIG. 2.

(a) Plan-view electron diffraction pattern along Si[111] for the triangular islands in Fig. 1(a). The circle marks a silicide reflection coincident with the Si position; (b) HREM micrograph along Si[1-10] showing cross section of a NW along the long axis; (c) plan-view orientation of the NWs and triangles corresponding to diffraction pattern in panel a.

Image of FIG. 3.
FIG. 3.

HREM micrographs showing cross sections of NWs along their long axes. Steps at the interface are marked with bottom arrows and the number of bilayers at each step. Extended defects in the island are marked with top arrows.

Image of FIG. 4.
FIG. 4.

Interface model for the lattice shift associated with a two-bilayer substrate step. Atom positions A, B, and C are described. The coordinates for Table I are shown.


Generic image for table
Table I.

Calculated lattice shift (vector AC from Fig. 4) for various step heights. Vector components are given in angstroms along directions, and Si lattice vectors along directions. in the table is the lattice parameter for Si lattice. The measured vertical shift, determined from TEM images, is also shown.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Epitaxial DySi2 nanowire formation on stepped Si(111)