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Long-wavelength light emission and lasing from quantum dots covered by a GaAsSb strain-reducing layer
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10.1063/1.1897850
/content/aip/journal/apl/86/14/10.1063/1.1897850
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/14/10.1063/1.1897850
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

PL spectra recorded at (a) and (b) RT for InAs quantum dots with (, 14, 17, and 22%) and strain-reducing layers.

Image of FIG. 2.
FIG. 2.

Power-dependent PL spectra at for samples with (a) and (b) strain-reducing layers. The intensities of the spectra are normalized to a common maximum value.

Image of FIG. 3.
FIG. 3.

Schematic band diagrams of (a) and (b) structures.

Image of FIG. 4.
FIG. 4.

RT EL spectra of a five-layer QD laser device recorded for cw currents both below and above threshold.

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/content/aip/journal/apl/86/14/10.1063/1.1897850
2005-03-30
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Long-wavelength light emission and lasing from InAs∕GaAs quantum dots covered by a GaAsSb strain-reducing layer
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/14/10.1063/1.1897850
10.1063/1.1897850
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