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PL spectra recorded at (a) and (b) RT for InAs quantum dots with (, 14, 17, and 22%) and strain-reducing layers.
Power-dependent PL spectra at for samples with (a) and (b) strain-reducing layers. The intensities of the spectra are normalized to a common maximum value.
Schematic band diagrams of (a) and (b) structures.
RT EL spectra of a five-layer QD laser device recorded for cw currents both below and above threshold.
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