1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Selective etching of InGaAs∕GaAs(100) multilayers of quantum-dot chains
Rent:
Rent this article for
USD
10.1063/1.1898425
/content/aip/journal/apl/86/14/10.1063/1.1898425
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/14/10.1063/1.1898425
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic of the grown layer sequence. The surface morphologies of the InAs QD layer and after 8.0 ML GaAs capping are illustrated.

Image of FIG. 2.
FIG. 2.

AFM images of the sample topography (a) before etching and (b) after one second etching.

Image of FIG. 3.
FIG. 3.

(a) and (c) are AFM images at different magnifications of the sample topography after three second etching; (b) is the roughness histogram of the white-outlined square area in (a).

Image of FIG. 4.
FIG. 4.

(a) AFM image of the sample topography after six second etching. The ragged steps from etching is outlined and numbered; (b) [01-1] cross-view AFM image of the sample after three second etching.

Loading

Article metrics loading...

/content/aip/journal/apl/86/14/10.1063/1.1898425
2005-03-29
2014-04-20
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Selective etching of InGaAs∕GaAs(100) multilayers of quantum-dot chains
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/14/10.1063/1.1898425
10.1063/1.1898425
SEARCH_EXPAND_ITEM