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Schematic of the grown layer sequence. The surface morphologies of the InAs QD layer and after 8.0 ML GaAs capping are illustrated.
AFM images of the sample topography (a) before etching and (b) after one second etching.
(a) and (c) are AFM images at different magnifications of the sample topography after three second etching; (b) is the roughness histogram of the white-outlined square area in (a).
(a) AFM image of the sample topography after six second etching. The ragged steps from etching is outlined and numbered; (b) [01-1] cross-view AFM image of the sample after three second etching.
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