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Structure of the LET device employing a thin Mylar foil as substrate and gate dielectric and a tetracene thin film as active layer.
AFM micrographs of tetracene films grown on Mylar having a nominal thickness of , grown at nominal deposition fluxes of (a) and (b) .
Output characteristics of tetracene LETs: (a), (b) LET employing a -thick foil of Mylar as gate dielectric, and ; (c), (d) LET employing a -thick layer of as gate dielectric, and . The vs curves are reported in (a), (c) while the corresponding EL vs are shown in (b), (d). Deposition flux of the active layer: , nominal thickness: .
Transfer characteristics ( and corresponding EL vs ) at drain current saturation of tetracene LETs employing as gate dielectric a -thick foil of Mylar (a) and a -thick layer of (b). The insets show the square root of as a function of . Deposition flux of the active layer: , nominal thickness: .
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