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thickness, measured by SE (a) and number of Hf absorbed on the surface, measured by TXRF (b) for layers deposited on HF-dipped silicon surfaces (circles) and after a treatment (squares), as a function of the number of deposition cycles.
Atomic force microscopy images of a thin (10 cycles) deposited on HF-dipped silicon surface (a) and after the subsequent treatment (b).
(a) and (b) core-level spectra of a thin layer (10 cycles) deposited on silicon after a chlorine treatment.
EOT, extracted from curves, of 3.7, 5.1, and thick layers as deposited (black circles) and after annealing at (black squares) and (black triangles) compared to those obtained on thick chemical layers (open symbols).
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