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Surface treatment for the atomic layer deposition of on silicon
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10.1063/1.1899237
/content/aip/journal/apl/86/14/10.1063/1.1899237
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/14/10.1063/1.1899237
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Figures

Image of FIG. 1.
FIG. 1.

thickness, measured by SE (a) and number of Hf absorbed on the surface, measured by TXRF (b) for layers deposited on HF-dipped silicon surfaces (circles) and after a treatment (squares), as a function of the number of deposition cycles.

Image of FIG. 2.
FIG. 2.

Atomic force microscopy images of a thin (10 cycles) deposited on HF-dipped silicon surface (a) and after the subsequent treatment (b).

Image of FIG. 3.
FIG. 3.

(a) and (b) core-level spectra of a thin layer (10 cycles) deposited on silicon after a chlorine treatment.

Image of FIG. 4.
FIG. 4.

EOT, extracted from curves, of 3.7, 5.1, and thick layers as deposited (black circles) and after annealing at (black squares) and (black triangles) compared to those obtained on thick chemical layers (open symbols).

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/content/aip/journal/apl/86/14/10.1063/1.1899237
2005-04-01
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Surface treatment for the atomic layer deposition of HfO2 on silicon
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/14/10.1063/1.1899237
10.1063/1.1899237
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