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Near- and far-infrared dual-band detector
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) Schematic of single-emitter HIWIP dual-band detector after processing. The top contact, emitter, barrier, and bottom contact have thicknesses of , , , and , respectively. A window on the top of the device is made for front side illumination, leaving only about as the emitter thickness. (b) The band diagram for HIWIP dual-band detector indicating both interband and intraband transitions leading to NIR and MIR∕FIR responses.

Image of FIG. 2.
FIG. 2.

The interband response fitted with a model for reverse bias. The inset shows the bias dependence of the exciton peak at the threshold end of the experimental response curve. The two curves for 10 and reverse bias have been multiplied by 10 and 3, respectively, for clarity.

Image of FIG. 3.
FIG. 3.

(a) Interband and intraband responses at under different reverse bias values. (b) Interband and intraband response at different temperatures under bias. The left and right axes are the NIR and FIR responsivities, respectively, and a break on the wavelength axis at has been made in order to expand the view in both regions.

Image of FIG. 4.
FIG. 4.

(a) curves at different temperatures under dark condition. The asymmetry in the is probably due to the asymmetry in the structure. (b) The Arrhenius curves under different reverse electric fields, while (c) shows the variation of calculated effective barrier height based on Arrhenius plot with the square root of applied electric field.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Near- and far-infrared p‐GaAs dual-band detector