Full text loading...
Gate reverse current of the HEMT as a function of gate-to-drain voltage before (solid line) and after annealing (dashed line) for 20 min at 400 °C.
(solid) and pulsed at and a quiescent bias point of at pulse widths of (dash), (dot), (dash-dot), and (dash-dot-dot); (pulse separation: 1 ms): (a) unannealed HEMTs and (b) HEMTs annealed at 400 °C for 20 min.
Temperature dependence of the time constant extracted from the drain current transient curves. The temperature ranges from 295 to 363 K for unannealed HEMTs [(a)] and from 343 to 368 K for 20-min annealed HEMTs [(b)]. The gate is pulsed from to and the drain voltage is 7 V.
Schematic diagram for the HEMTs to describe the gate leakage/breakdown mechanism under a quiescent bias condition of off-state.
Article metrics loading...