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Gate current leakage and breakdown mechanism in unpassivated high electron mobility transistors by post-gate annealing
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10.1063/1.1899255
/content/aip/journal/apl/86/14/10.1063/1.1899255
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/14/10.1063/1.1899255
/content/aip/journal/apl/86/14/10.1063/1.1899255
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/content/aip/journal/apl/86/14/10.1063/1.1899255
2005-03-30
2014-07-30
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Gate current leakage and breakdown mechanism in unpassivated AlGaN∕GaN high electron mobility transistors by post-gate annealing
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/14/10.1063/1.1899255
10.1063/1.1899255
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