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Gate current leakage and breakdown mechanism in unpassivated high electron mobility transistors by post-gate annealing
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10.1063/1.1899255
/content/aip/journal/apl/86/14/10.1063/1.1899255
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/14/10.1063/1.1899255
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Gate reverse current of the HEMT as a function of gate-to-drain voltage before (solid line) and after annealing (dashed line) for 20 min at 400 °C.

Image of FIG. 2.
FIG. 2.

(solid) and pulsed at and a quiescent bias point of at pulse widths of (dash), (dot), (dash-dot), and (dash-dot-dot); (pulse separation: 1 ms): (a) unannealed HEMTs and (b) HEMTs annealed at 400 °C for 20 min.

Image of FIG. 3.
FIG. 3.

Temperature dependence of the time constant extracted from the drain current transient curves. The temperature ranges from 295 to 363 K for unannealed HEMTs [(a)] and from 343 to 368 K for 20-min annealed HEMTs [(b)]. The gate is pulsed from to and the drain voltage is 7 V.

Image of FIG. 4.
FIG. 4.

Schematic diagram for the HEMTs to describe the gate leakage/breakdown mechanism under a quiescent bias condition of off-state.

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/content/aip/journal/apl/86/14/10.1063/1.1899255
2005-03-30
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Gate current leakage and breakdown mechanism in unpassivated AlGaN∕GaN high electron mobility transistors by post-gate annealing
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/14/10.1063/1.1899255
10.1063/1.1899255
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